个人简介

本科、硕士毕业于清华大学电子工程系（1981-1988），博士毕业于中国科学院半导体研究所(1988-1992)。1992-2000年曾先后任职于中科院半导体所、德国马普学会、日本广岛大学、美国缅因大学等学术机构任博士后/研究员；2000-2014年就职于美国朗讯科技、美国英特尔公司任研发科学家/部门经理等职务；2014-2021年任中国科学院苏州纳米所研究员、博士生导师，纳米真空互联实验站主任；2021-2022年授聘南方科技大学深港微电子学院任研究教授，博士生导师。2022年任职南京大学集成电路学院（苏州）特聘教授。

主要研究方向为集成电路先进材料与创新工艺，宽禁带及超宽禁带半导体材料与器件，表面科学分析与异质界面调控，微纳材料特性表征与半导体器件失效分析。

英文简介

Dr. Sunan Ding graduated from Tsinghua University, Beijing, in 1986 and then received his Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences, in 1992. Dr. Ding has 30+ years of experience in semiconductor and microelectronics, including research, developing, engineering, and teaching in several prestigious institutes and companies of the world, such as Max-Planck-Society in Germany, Lucent Technology, and Intel Corporation in USA, as well as SuZhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Southern University of Science and Technology in China. His research interesting includes novel materials and advanced processes for IC applications, wide-band-gap semiconductor growth and devices, thin films, and surface/interface analysis; Dr. Ding is skilled at failure analysis and material characterization (SIMS, XPS, AES, TXRF, FTIR, PL, IV-CV, SEM, AFM etc.), combining with materials fabrication and device processing.